MT28F160A3 Datasheet, PDF (1/28 Pages) Micron Technology – FLASH MEMORY

ADVANCE^‡
1 MEG x 16
ENHANCED BOOT BLOCK FLASH MEMORY
FLASH MEMORY
MT28F160A3
Low Voltage, Extended Temperature
FEATURES
• Thirty-nine erase blocks:
Two 4K-word boot blocks (protected)
Six 4K-word parameter blocks
Thirty-one 32K-word main memory blocks
• VCC, VCCQ and VPP voltages:
2.7V–3.3V VCC and VPP
2.7V–3.3V VCCQ*
5V VPP fast programming voltage
• Address access times:
90ns, 110ns at 2.7V–3.3V
• Low power consumption:
Standby and deep power-down mode < 1µA
(typical ICC)
Automatic power saving feature (APS mode)
• Enhanced WRITE/ERASE SUSPEND (1µs typical)
• Industry-standard command set compatibility
• Hardware block protection
OPTIONS
• Timing
90ns access
110ns access
NUMBER
-9
-11
• Boot Block Starting Address
Top (FFFFFH)
T
Bottom (00000H)
B
• Package
46-ball FBGA (6 x 8 ball grid)
FD
• Temperature Range
Commercial (0°C to +70°C)
Extended (-40°C to +85°C)
None
ET
*Lower VCCQ ranges are available upon request.
Part Number Example:
MT28F160A3FD-11 TET
GENERAL DESCRIPTION
The MT28F160A3 is a nonvolatile, electrically block-
erasable (flash), programmable, read-only memory con-
taining 16,777,216 bits organized as 1,048,576 words
(16 bits).
The MT28F160A3 is manufactured on 0.22µm process
technology in a 48-ball FBGA package. The device has an
I/O supply of 2.7V (MIN). Programming in production is
BALL ASSIGNMENT (Top View)
46-Ball FBGA
1
2
3
4
5
6
7
8
A
A13 A11
A8
VPP
WP# A19
A7
A4
B
A14 A10 WE# RP# A18 A17
A5
A2
C
A15 A12
A9
A6
A3
A1
D
A16 DQ14 DQ5 DQ11 DQ2 DQ8 CE#
A0
E
VCCQ DQ15 DQ6 DQ12 DQ3 DQ9 DQ0
VSS
F
VSS
DQ7 DQ13 DQ4
VCC DQ10 DQ1 OE#
(Ball Down)
NOTE: See page 3 for Ball Description Table.
See last page for mechanical drawing.
accomplished by using high voltage which can be sup-
plied on a separate line.
The embedded WORD WRITE and BLOCK ERASE
functions are fully automated by an on-chip write state
machine (WSM), which simplifies these operations and
relieves the system processor of secondary tasks. The
WSM status can be monitored by an on-chip status
register to determine the progress of program/erase tasks.
Please refer to Micron’s Web site (www.micron.com/
flash) for the latest data sheet.
DEVICE MARKING
Due to the size of the package, Micron’s standard part
number is not printed on the top of each device. Instead,
an abbreviated device mark comprised of a five-digit
alphanumeric code is used. The abbreviated device marks
are cross referenced to Micron part numbers in
Table 1.
1 Meg x 16 Enhanced Boot Block Flash Memory
MT28F160A3_3.p65 – Rev. 3, Pub. 8/01
1
©2001, Micron Technology, Inc.
‡_{PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PURPOSES ONLY AND}
ARE SUBJECT TO CHANGE BY MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET
MICRON’S PRODUCTION DATA SHEET SPECIFICATIONS.