TC2014 Datasheet, PDF (7/18 Pages) Microchip Technology – 50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass

TC2014/2015/2185
Note: Unless otherwise indicated, V_IN = V_R + 1V, I_L = 100 µA, C_OUT = 3.3 µF, SHDN > V_IH, T_A = +25°C.
FIGURE 2-19:
(C_OUT = 1 µF).
Line Transient Response.
100mV/DIV
VOUT
150mA
VIN = 3.105V
VOUT = 3.006V
CIN = 1 µF Ceramic
COUT = 10 µF Ceramic
RLOAD = 20 Ω
100mA
FIGURE 2-20:
Load Transient Response in
Dropout. (C_OUT = 10 µF).
FIGURE 2-21:
Shutdown Delay Time.
FIGURE 2-22:
Wake-Up Response.
0
-10
-20
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
COUT = 1µF Ceramic
CBYPASS = 0.01 µF Ceramic
-30
IOUT = 150 mA
-40 _{IOUT = 100 mA}
-50
-60
-70
10
IOUT = 50 mA
100 110k00 10100k0 101000k0 1010M000
0
Frequency (Hz)
FIGURE 2-23:
PSRR vs. Frequency
(C_OUT = 1 µF Ceramic).
0
-10
-20
VIN = 4.0V
VINAC = 100 mV
VOUTDC = 3.0V
COUT = 10 µF Ceramic
CBYPASS = 0.01 µF Ceramic
-30
IOUT = 150 mA
-40
IOUT = 100 mA
-50
-60
-70
1100
100 110k00 11000k00 11000k00 1010M000
0
Frequency (Hz)
FIGURE 2-24:
PSRR vs. Frequency
(C_OUT = 10 µF Ceramic).
 2003 Microchip Technology Inc.
DS21662C-page 7