TC2014 Datasheet, PDF (2/18 Pages) Microchip Technology – 50 mA, 100 mA, 150 mA CMOS LDOs with Shutdown and Reference Bypass

TC2014/2015/2185
1.0 ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
Input Voltage ................................................................... 6.5V
Output Voltage ....................................... (– 0.3) to (V_IN + 0.3)
Operating Temperature ......................... – 40°C < T_J < 125°C
Storage Temperature ................................. – 65°C to +150°C
Maximum Voltage on Any Pin ................ V_IN +0.3V to – 0.3V
Maximum Junction Temperature ...................... ............ 150°C
† Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operation listings of this specification is not implied. Exposure
to maximum rating conditions for extended periods may affect
device reliability.
ELECTRICAL CHARACTERISTICS
PIN FUNCTION TABLE
Name
V_IN
GND
SHDN
Bypass
V_OUT
Function
Unregulated Supply Input
Ground Terminal
Shutdown Control Input
Reference Bypass Input
Regulated Voltage Output
Electrical Specifications: Unless otherwise specified, V_IN = V_R + 1V, I_L = 100 µA, C_OUT = 3.3 µF, SHDN > V_IH, T_A = +25°C.
BOLDFACE type specifications apply for junction temperature of -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Operating Voltage
V_IN
2.7
—
6.0
V Note 1
Maximum Output
Current
I_OUTMAX
50
—
100
—
—
mA TC2014
—
TC2015
150
—
—
TC2185
Output Voltage
V_OUT Temperature
Coefficient
V_OUT
TCV_OUT
V_R - 2.0%
—
—
V_R ± 0.4%
20
40
V_R + 2.0%
—
—
V
ppm/°C
Note 2
Note 3
Line Regulation
Load Regulation
(Note 4)
Dropout Voltage
Supply Current
Shutdown Supply
Current
∆V_OUT/∆V_IN
—
∆V_OUT/V_OUT
-1.0
-2.0
V_IN - V_OUT
—
—
—
—
I_IN
—
I_INSD
—
0.05
0.33
0.43
2
45
90
140
55
0.05
0.5
+1.0
+2.0
—
70
140
210
80
0.5
% (V_R + 1V) < V_IN < 6V
% TC2014;TC2015: I_L = 0.1 mA to I_OUTMAX
TC2185: I_L = 0.1 mA to I_OUTMAX Note 4
mV Note 5
I_L = 100 µA
I_L = 50 mA
TC2015; TC2185 I_L = 100 mA
TC2185
I_L = 150 mA
µA SHDN = V_IH, I_L=0
µA SHDN = 0V
Note 1: The minimum V_IN has to meet two conditions: V_IN = 2.7V and V_IN = V_R + V_DROPOUT.
2: V_R is the regulator output voltage setting. For example: V_R = 1.8V, 2.7V, 2.8V, 2.85V, 3.0V, 3.3V.
3:
T C V_{O U T}
=
-⁽--^V----^O---^U----^T---^M----^A---^X----–-----^V----^O---^U----^T---^M----^I--^N---⁾----^×-----¹---⁰---–---⁶-
V_OUT × ∆T
4: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested
over a load range from 1.0 mA to the maximum specified output current. Changes in output voltage due to heating
effects are covered by the thermal regulation specification.
5: Dropout voltage is defined as the input-to-output differential at which the output voltage drops 2% below its nominal
value at a V differential.
6: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,
excluding load or line regulation effects. Specifications are for a current pulse equal to I_MAX at V_IN = 6V for T = 10 msec.
7: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction tem-
perature and the thermal resistance from junction-to-air (i.e. T_A, T_J, θ_JA).
8: Time required for V_OUT to reach 95% of V_R (output voltage setting), after V_SHDN is switched from 0 to V_IN.
DS21662C-page 2
 2003 Microchip Technology Inc.