MCP6041T-I Datasheet, PDF(3/40 Page) Microchip Technology – 600 nA, Rail-to-Rail Input/Output Op Amps

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MCP6041T-I Datasheet, PDF (3/40 Pages) Microchip Technology – 600 nA, Rail-to-Rail Input/Output Op Amps

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MCP6041/2/3/4

AC ELECTRICAL CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25Â°C, VCM = VDD/2,

VOUT ï» VDD/2, VL = VDD/2, RL = 1 Mïï to VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3).

Parameters

Sym Min Typ Max Units

Conditions

AC Response

Gain Bandwidth Product

GBWP â

kHz

Slew Rate

3.0

â V/ms

Phase Margin

Noise

Â° G = +1 V/V

Input Voltage Noise

Input Voltage Noise Density

Input Current Noise Density

Eni

5.0

â ÂµVP-P f = 0.1 Hz to 10 Hz

eni

170

â nV/ïHz f = 1 kHz

ini

0.6

â fA/ïHz f = 1 kHz

MCP6043 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS

Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS = GND, TA = 25Â°C, VCM = VDD/2,

VOUT ï» VDD/2, VL = VDD/2, RL = 1 Mïï to VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3).

Parameters

Sym Min Typ Max Units

Conditions

CS Low Specifications

CS Logic Threshold, Low

CS Input Current, Low

CS High Specifications

VIL

ICSL

VSS

â VSS+0.3

pA CS = VSS

CS Logic Threshold, High

CS Input Current, High

CS Input High, GND Current

Amplifier Output Leakage, CS High

Dynamic Specifications

VIH VDDâ0.3

ICSH

ISS

-20

IOLEAK

VDD

pA CS = VDD

CS Low to Amplifier Output Turn-on Time tON

ms G = +1V/V, CS = 0.3V to

VOUT = 0.9VDD/2

CS High to Amplifier Output High-Z

Hysteresis

tOFF

Âµs G = +1V/V, CS = VDDâ0.3V to

VOUT = 0.1VDD/2

VHYST

0.6

VDD = 5.0V

VIL

VOUT

tON

High-Z

ISS -20 pA

(typical)

-0.6 ÂµA

(typical)

VIH

tOFF

High-Z

-20 pA

(typical)

ICS 5 pA

(typical)

FIGURE 1-1:

Chip Select (CS) Timing

Diagram (MCP6043 only).

ï£ 2001-2013 Microchip Technology Inc.

DS21669D-page 3

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