MMD80R900P Datasheet, PDF (8/10 Pages) MagnaChip Semiconductor. – 800V 0.9(ohm) N-channel MOSFET

 Test Circuit
Same type as DUT
100KΩ
10V
1mA
10V
DUT
+
VDS
-
Fig15-1. Gate charge measurement circuit
MMD80R900P Datasheet
VGS
10V
Qgs
Qg
Qgd
Charge
Fig15-2. Gate charge waveform
DUT
IS
Rg
10KΩ
Vgs ± 15V
IF
+
- ^VDS
L
Same type as DUT
+
VDD
-
Fig16-1. Diode reverse recovery test circuit
ID
DUT
Rg
25Ω
VDS
RL
trr
IFM
0.5 IRM
ta
tb
di/dt
0.75 IRM
0.25 IRM
IRM
VR
VRM(REC)
Fig16-1. Diode reverse recovery test waveform
VDS
90%
Vgs
tp
+
VDD
-
10%
VGS
Fig17-1. Switching time test circuit for resistive load
IAS
DUT
VDS
Rg
L
Td(on)
tr
ton
Td(off) t_f
toff
Fig17-2. Switching time waveform
tp
IAS
BVDSS
tAV
Vgs
tp
VDD
+
VDD
-
Fig18-1. Unclamped inductive load test circuit
VDS(t)
Rds(on) * IAS
Fig18-2. Unclamped inductive waveform
Jan. 2015 Revision 1.1
8
MagnaChip Semiconductor Ltd.