MMD80R900P Datasheet, PDF (1/10 Pages) MagnaChip Semiconductor. – 800V 0.9(ohm) N-channel MOSFET

MMD80R900P Datasheet
MMD80R900P
800V 0.9Ω N-channel MOSFET
 Description
MMD80R900P is power MOSFET using magnachip’s advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
 Key Parameters
Parameter
V_DS @ T_j,max
R_DS(on),max
V_TH,typ
I_D
Q_g,typ
Value
850
0.9
3
6
17.6
Unit
V
Ω
V
A
nC
 Package & Internal Circuit
D
G
DS
G
S
 Features
 Low Power Loss by High Speed Switching and Low On-Resistance
 100% Avalanche Tested
 Green Package – Pb Free Plating, Halogen Free
 Applications
 PFC Power Supply Stages
 Switching Applications
 Adapter
 Motor Control
 DC – DC Converters
 Ordering Information
Order Code
Marking
MMD80R900PRH 80R900P
Temp. Range
-55 ~ 150℃
Package
TO-252
(D-PAK)
Jan. 2015 Revision 1.1
1
Packing RoHS Status
Reel & Tape Halogen Free
MagnaChip Semiconductor Ltd.