MMD80R900P Datasheet, PDF (3/10 Pages) MagnaChip Semiconductor. – 800V 0.9(ohm) N-channel MOSFET

MMD80R900P Datasheet
 Static Characteristics (T_c=25℃ unless otherwise specified)
Parameter
Drain – Source
Breakdown voltage
Gate Threshold Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Drain-Source On
State Resistance
Symbol Min. Typ. Max. Unit Test Condition
V_(BR)DSS
V_GS(th)
I_DSS
I_GSS
R_DS(ON)
800 -
-
2.0 3.0 4.0
-
-
1
-
- 100
- 0.78 0.9
V V_GS = 0V, I_D=0.25mA
V V_DS = V_GS, I_D=0.25mA
μA V_DS = 800V, V_GS = 0V
nA V_GS = ±30V, V_DS =0V
Ω V_GS = 10V, I_D = 3.8A
 Dynamic Characteristics (T_c=25℃ unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Energy Related ⁽³⁾
Turn On Delay Time
C_iss
C_oss
C_rss
C_o(er)
t_d(on)
- 574 -
- 508 -
- 21 -
- 16.7 -
- 12.8 -
V_DS = 25V, V_GS = 0V,
pF ^{f = 1.0MHz}
V_DS = 0V to 640V,
V_GS = 0V,f = 1.0MHz
Rise Time
Turn Off Delay Time
t_r
t_d(off)
- 22.4 -
- 54.4 -
ns
V_GS = 10V, R_G = 25Ω,
V_DS = 400V, I_D = 6A
Fall Time
t_f
- 23.6 -
Total Gate Charge
Gate – Source Charge
Gate – Drain Charge
Q_g
- 17.6 -
Q_gs
- 3.9 -
nC
V_GS = 10V, V_DS =640V,
I_D = 6A
Q_gd
- 6.7 -
Gate Resistance
R_G
- 2.5 -
Ω V_GS = 0V, f = 1.0MHz
3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
Jan. 2015 Revision 1.1
3
MagnaChip Semiconductor Ltd.