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| MMD80R900P Datasheet, PDF (4/10 Pages) MagnaChip Semiconductor. – 800V 0.9(ohm) N-channel MOSFET | |||
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MMD80R900P Datasheet
ï® Reverse Diode Characteristics (Tc=25â unless otherwise specified)
Parameter
Continuous Diode Forward
Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Symbol Min. Typ. Max. Unit Test Condition
ISD
-
- 6.0 A
VSD
-
-
1.4
V ISD = 6 A, VGS = 0 V
trr
- 320 -
ns
ISD = 6 A
Qrr
- 2.4 -
μC di/dt = 100 A/μs
VDD = 100 V
Irrm
- 14.7 -
A
Jan. 2015 Revision 1.1
4
MagnaChip Semiconductor Ltd.
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