MDP10N60G Datasheet, PDF (5/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 10A, 0.7(ohm)

20000
18000
16000
14000
12000
single Pulse
R = 0.8℃/W
thJC
T_C = 25℃
10000
8000
6000
4000
2000
0
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.13 Single Pulse Maximum Power
Dissipation MDP10N60G(TO-220)
12
10
8
6
4
2
0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Fig.15 Maximum Drain Current vs. Case
Temperature
16000
14000
12000
single Pulse
R = 2.6℃/W
thJC
T_C = 25℃
10000
8000
6000
4000
2000
0
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.14 Single Pulse Maximum Power
Dissipation MDF10N60G(TO-220F)
Dec. 2014 Version 1.5
5
MagnaChip Semiconductor Ltd.