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| MDP10N60G Datasheet, PDF (4/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 10A, 0.7(ohm) | |||
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10
â» Note : I = 10A
D
8
6
120V
300V
480V
4
2
0
0
5
10
15
20
25
30
35
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R
DS(on)
101
100
10 ïs
100 ïs
10 ms 1 ms
DC 100 ms
10-1
Single Pulse
T =Max rated
J
TC=25â
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
MDP10N60G(TO-220)
2400
2200
2000
1800
1600
1400
1200
1000
800
600
400
200
0
Coss
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
1
10
V , Drain-Source Voltage [V]
DS
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R
DS(on)
101
100
10 ïs
100 ïs
1 ms
10 ms
100 ms
DC 1s
10-1
Single Pulse
TJ=Max rated
TC=25â
10-2
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Safe Operating Area
MDF10N60G(TO-220F)
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JC=0.8â/W
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
MDP10N60G(TO-220)
Dec. 2014 Version 1.5
4
D=0.5
100
0.2
0.1
0.05
10-1
0.02
10-2
10-5
0.01
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
R =2.6â/W
Î JC
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.12 Transient Thermal Response Curve
MDF10N60G(TO-220F)
MagnaChip Semiconductor Ltd.
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