MDP10N60G Datasheet, PDF (1/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 10A, 0.7(ohm)

MDP10N60G/MDF10N60G
N-Channel MOSFET 600V, 10A, 0.7Ω
General Description
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Features
 VDS = 600V
 VDS = 660V
 ID = 10A
 RDS(ON) ≤ 0.7Ω
Applications
@ Tjmax
@ VGS = 10V
@ VGS = 10V
 Power Supply
 PFC
 High Current, High Speed Switching
D
TO-220
MDP Series
TO-220F
MDF Series
Absolute Maximum Ratings (Ta = 25^oC)
Characteristics
Drain-Source Voltage
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current⁽¹⁾
Power Dissipation
Repetitive Avalanche Energy⁽¹⁾
Peak Diode Recovery dv/dt⁽³⁾
Single Pulse Avalanche Energy⁽⁴⁾
TC=25^oC
TC=100^oC
TC=25^oC
Derate above 25 ^oC
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
G
S
`
Symbol
VDSS
VDSS @ Tjmax
VGSS
ID
IDM
PD
EAR
dv/dt
EAS
TJ, Tstg
MDP10N60G MDF10N60G
600
660
±30
10
10*
6.3
6.3*
40
40*
156
48
1.25
0.38
15.6
4.5
520
-55~150
Unit
V
V
V
A
A
A
W
W/ ^oC
mJ
V/ns
mJ
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient⁽¹⁾
Thermal Resistance, Junction-to-Case⁽¹⁾
Symbol
RθJA
RθJC
MDP10N60G
62.5
0.8
MDF10N60G
62.5
2.6
Unit
o_C/W
Dec. 2014 Version 1.5
1
MagnaChip Semiconductor Ltd.