MDP10N60G Datasheet, PDF (3/8 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 600V, 10A, 0.7(ohm)

20
18
V_gs=5.5V
=6.0V
=6.5V
16
=7.0V
=8.0V
14
=10.0V
=15.0V
12
10
8
6
4
2
Notes
1. 250㎲ Pulse Test
2. T_C=25℃
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
1. V = 10 V
2.5
GS
2. I_D = 5.0A
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
1.0
0.9
0.8
V_GS=10.0V
0.7
V_GS=20V
0.6
0.5
0
5
10
15
20
I_D,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V = 0 V
GS
2. I = 250㎂
D
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Fig.4 Breakdown Voltage Variation vs.
Temperature
* Notes ;
1. Vds=30V
10
150℃ _25℃
-55℃
1
※ Notes :
1. V_GS = 0 V
2.250s Pulse test
10
150℃
25℃
1
0.1
2
4
6
8
V [V]
GS
Fig.5 Transfer Characteristics
Dec. 2014 Version 1.5
10
3
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.