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| MDX5N40 Datasheet, PDF (4/7 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 400V, 3.4 A, 1.6(ohm) | |||
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10
â» Note : ID = 5A
8
80V
200V
320V
6
4
2
0
0
2
4
6
8
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
600
Coss
500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400
Ciss
300
200
Crss
100
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
1
10
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100
DC
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TC=25â
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
10 µs
100 µs
1 ms
10 ms
100 ms
5
4
3
2
1
0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current vs. Case
Temperature
D=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
10-2
10-5
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JC=2.75â/W
10-4
10-3
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
5000
4000
3000
single Pulse
RthJC = 2.75â/W
TC = 25â
2000
1000
0
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Fig.12 Single Pulse Maximum Power
Dissipation
Dec. 2011. Version 1.5
4
MagnaChip Semiconductor Ltd.
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