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MDX5N40 Datasheet, PDF (1/7 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 400V, 3.4 A, 1.6(ohm)
MDI5N40/MDD5N40
N-Channel MOSFET 400V, 3.4 A, 1.6Ω
General Description
The MDI5N40 / MDD5N40 use advanced
Magnachip’s MOSFET Technology, which provides
low on-state resistance, high switching performance
and excellent quality.
MDI5N40 is suitable device for SMPS, HID and
general purpose applications.
Features
VDS = 400V
ID = 3.4A
RDS(ON) ≤ 1.6Ω
Applications
Power Supply
PFC
Ballast
@VGS = 10V
@VGS = 10V
D
I-PAK
G D S (TO-251)
G
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
Peak Diode Recovery dv/dt(3)
Repetitive Pulse Avalanche Energy(4)
Single Pulse Avalanche Energy(4)
Junction and Storage Temperature Range
TC=25oC
TC=100oC
TC=25oC
Derate above 25 oC
Symbol
VDSS
VGSS
ID
IDM
PD
Dv/dt
EAR
EAS
TJ, Tstg
Rating
400
±30
3.4
2.15
13.6
45
0.36
4.5
4.5
170
-55~150
Unit
V
V
A
A
A
W
W/ oC
V/ns
mJ
mJ
oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
Dec. 2011. Version 1.5
1
Symbol
RθJA
RθJC
Rating
110
2.75
Unit
oC/W
MagnaChip Semiconductor Ltd.