English
Language : 

MDX5N40 Datasheet, PDF (2/7 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 400V, 3.4 A, 1.6(ohm)
◁
Ordering Information
Part Number
MDI5N40TH
MDD5N40RH
Temp. Range
-55~150oC
-55~150oC
Package
TO-251(I-PAK)
D-PAK
Packing
Tube
Reel
RoHS Status
Halogen Free
Halogen Free
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
Gate Threshold Voltage
VGS(th)
Drain Cut-Off Current
IDSS
Gate Leakage Current
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gfs
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
IS
Source-Drain Diode Forward
Voltage
VSD
Body Diode Reverse Recovery
Time
trr
Body Diode Reverse Recovery
Charge
Qrr
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 400V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 1.7A
VDS = 30V, ID = 1.7A
VDS = 320V, ID = 3.4A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
VGS = 10V, VDS = 200V, ID = 3.4A,
RG = 25Ω(3)
IS = 3.4A, VGS = 0V
IF = 3.4A, di/dt = 100A/µs
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤3.4A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=26.0mH, IAS=3.4A, VDD=50V, Rg =25Ω, Starting TJ=25°C
Min
400
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
1.2
2.0
9
2.5
4
290
3
46
12
25
20
30
3.4
200
1.0
Max Unit
-
V
5.0
1
µA
100
nA
1.6
Ω
-
S
nC
pF
ns
-
A
1.4
V
ns
µC
Dec. 2011. Version 1.5
2
MagnaChip Semiconductor Ltd.
 ▷