MDX5N40 Datasheet, PDF (3/7 Pages) MagnaChip Semiconductor. – N-Channel MOSFET 400V, 3.4 A, 1.6(ohm)

10
9
V_gs=5.5V
=6.0V
=6.5V
8
=7.0V
=8.0V
7
=10.0V
=15.0V
6
Notes
1. 250㎲ PulseTest
2. T_C=25℃
5
4
3
2
1
5
10
15
20
V_DS,Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
3.0
※ Notes :
2.5
1. V_GS = 10 V
2. I_D = 1.7 A
2.0
1.5
1.0
0.5
0.0
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
10
* Notes ;
1. V_DS=30V
150℃
25℃
1
4
6
8
V_GS [V]
Fig.5 Transfer Characteristics
Dec. 2011. Version 1.5
3
3.4
3.2
3.0
2.8
2.6
2.4
2.2
V_GS=10.0V
2.0
1.8
V_GS=20V
1.6
1.4
1.2
1.0
0
5
10
I_D,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
1.2
※ Notes :
1. V = 0 V
GS
2. I_D = 250㎂
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Fig.4 Breakdown Voltage Variation vs.
Temperature
※ Notes :
10
1. V_GS = 0 V
2. 250us pulse
1
150℃
25℃
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD, Source-Drain Voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
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