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| MDWC0340EB Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 m(ohm) | |||
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5
* Note : I = 2.5A
S
V = 10V
DD
4
3
2
1
0
0
20
40
60
80
100
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
103
Operation in This Area
is Limited by R (V =3.8V)
SS(on) GS
102
101
100
100 ïs
1 ms
10 ms
100 ms
1s
10-1
Single Pulse
T =Max Rated
J
T =25oC
A
10-2
10-1
100
DC
101
102
V Source-Source Voltage [V]
SS
Fig.9 Maximum Safe Operating Area
5000
4000
C
iss
C = C + C (C = shorted)
iss gs gd ds
C =C +C
oss ds gd
C =C
rss gd
3000
2000
C
oss
1000
C
rss
* Notes ;
1. V = 0 V
GS
2. f = 1 MHz
0
0
5
10
15
V , Drain-Source Voltage [V]
DS
Fig.8 Capacitance Characteristics
100
D=0.5
0.2
10-1 0.1
0.05
0.02
10-2 0.01
single pulse
* Notes :
Duty Factor, D=t /t
12
PEAK T = P * Z * R (t) + T
J DM thJA thJA
A
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t , Rectangular Pulse Duration [sec]
1
Fig.10 Transient Thermal Response
Curve
Dec. 2016. Rev 1.0
4
MagnaChip Semiconductor Ltd.
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