MDWC0340EB Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 m(ohm)

Ordering Information
Part Number
MDWC0340EBRH
Temp. Range
-55~150^oC
Package
WLCSP
Packing
Tape and Reel
RoHS Status
Halogen Free
Electrical Characteristics (Ta =25^oC unless otherwise noted)
Characteristics
Static Characteristics
Source-Source Breakdown Voltage
Gate Threshold Voltage
Cut-Off Current
Gate Leakage Current
Symbol
BVSSS
VGS(th)
ISSS
IGSS
Source-Source Resistance
RSS(ON)
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Body Diode Characteristics
Source-Source Diode Forward Voltage
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VF(S-S)
Test Condition
IS = 500μA, VGS = 0V
VSS = VGS, IS = 1mA
VSS = 12V, VGS = 0V
VGS = ±8V, VSS = 0V
VGS = 4.5V, IS = 5.0A
VGS = 3.8V, IS = 5.0A
VGS = 3.1V, IS = 5.0A
VGS = 2.5V, IS = 5.0A
V = 10V, I = 2.5A, V = 4.5V
DS
D
GS
V_DS = 10V, V_GS = 0V, f = 1MHz
VGS = 4.5V, VDS = 10V,
ID = 5A, RGEN = 3Ω
I = 1.0A, V = 0V
S
GS
Note *1. Mounted on FR4 board “jesd51-7” (76.2mm x 114.3mm x t1.6mm),
*2. t= 10us, Duty Cycle ≤ 1%
Min
Typ
Max Units
12
-
-
V
0.5
1.0
1.5
-
-
1.0
μA
-
-
10
μA
1.9
2.5
3.3
2.0
2.7
3.6
mΩ
2.1
3.2
4.8
2.4
4.1
7.0
-
95.5
-
-
7.0
-
nC
-
27
-
-
3340
-
-
866
-
pF
-
1250
-
-
156
-
-
570
-
ns
-
4750
-
-
9000
-
-
0.7
1.2
V
Dec. 2016. Rev 1.0
2
MagnaChip Semiconductor Ltd.