MDWC0340EB Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 m(ohm)

MDWC0340EB
Common-Drain Dual N-Channel Trench MOSFET 12V, 13.6A, 2.5 mΩ
General Description
The MDWC0340EB uses advanced MagnaChip’s
MOSFET Technology, which provides high performance in
on-state resistance and excellent reliability. Excellent low
RSS(ON), low gate charge operation and operation for
Battery Application.
Features
- VSS = 12V
- Source-Source ON Resistance;
RSS(ON) typ. 2.5mΩ @ VGS = 4.5V
RSS(ON) typ. 2.7mΩ @ VGS = 3.8V
RSS(ON) typ. 3.2mΩ @ VGS = 3.1V
RSS(ON) typ. 4.1mΩ @ VGS = 2.5V
Applications
- Portable Battery Protection
Top View
3.54mm*1.77mm WLCSP
1. Source (FET1)
2. Gate (FET1)
3. Source (FET1)
4. Source (FET2)
5. Gate (FET2)
6. Source (FET2)
Absolute Maximum Ratings (Ta = 25^oC unless otherwise noted)
Characteristics
Source-Source Voltage
Gate-Source Voltage
Source Current
Total Power Dissipation
DC^*1
Pulse^*2
DC^*1
Channel Temperature
Junction and Storage Temperature Range
Symbol
VSSS
VGSS
IS
ISp
PD
Tch
TJ, Tstg
Thermal Characteristics
Thermal Resistance
Characteristics
Symbol
RθJA
Rating
12
±8
13.6
110
0.89
150
-55~150
Units
V
V
A
A
W
o_C
o_C
Rating
140
Unit
o_C/W
Dec. 2016. Rev 1.0
1
MagnaChip Semiconductor Ltd.