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| MDS3754A Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – P-Channel Trench MOSFET, -40V, -6.0A, 45m(ohm) | |||
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10
â» Note : ID = -6A
8
VDS = -28V
6
4
2
0
0
4
8
12
16
20
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
Operation in This Area
is Limited by R DS(on)
102
100 ïs
1 ms
101
10 ms
100 ms
1s
100
10 s
DC
10-1
Single Pulse
RthJA=125.0â /W
TA=25â
10-2
10-1
100
101
102
-VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK
T
J
=
P
DM
*
Zθ
JA*
Rθ
JA(t)
+
T
A
R
Î
JA=125.0â
/W
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
1.0n
800.0p
Ciss
600.0p
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
400.0p
200.0p
Coss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0.0
0
10
20
30
40
-VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
8
6
4
2
â» Notes :
R
thJA
=
50
[â
/W]
0
25
50
75
100
125
150
TA, Case Temperature [â ]
Fig.10 Maximum Drain Current vs. Case
Temperature
June 2009. Version 1.0
4
MagnaChip Semiconductor Ltd.
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