MDS3754A Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – P-Channel Trench MOSFET, -40V, -6.0A, 45m(ohm)

MDS3754A
P-Channel Trench MOSFET, -40V, -6.0A, 45mΩ
General Description
The MDS3754A uses advanced Magnachip’s Trench
MOSFET Technology to provided high performance in on-
state resistance, switching performance and reliability.
Low RDS(ON), Low Gate Charge can be offering superior
benefit in the application.
5(D)
6(D)
7(D)
8(D)
Features
 VDS = -40V
 ID = -6.0 @ VGS = -10V

RDS(ON)
<45m @ VGS = -10V
<60m @ VGS = -4.5V
Applications
 Inverters
 General purpose applications
D
4(G)
3(S)
2(S)
1(S)
Absolute Maximum Ratings (T_C =25^o)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
G
S
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
-40
V
±20
V
-6.0
A
-50
A
2.5
W
32
mJ
-55~+150
o_C
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
50
25
Unit
o_C/W
June 2009. Version 1.0
1
MagnaChip Semiconductor Ltd.