MDS3754A Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – P-Channel Trench MOSFET, -40V, -6.0A, 45m(ohm)

Ordering Information
Part Number
MDS3754ARH
Temp. Range
-55~150^oC
Package
SIOC-8
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (T_J =25^oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = -250μA, VGS = 0V
VDS = VGS, ID = -250μA
VDS = -32V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = -10V, ID = -6A
VGS = -4.5V, ID = -4A
VDS = -10V, ID = -6A
VDS = -28V, ID = -4.8A,
VGS = -10V
VDS = -25V, VGS = 0V,
f = 1.0MHz
VGS = -10V ,VDS = -20V,
ID = 1A, RGEN = 3.3Ω
IS = -6A, VGS = 0V
IS = -4.8A, di/dt=100A/us
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. Starting TJ=25°C, L=1mH, IAS=-8A VDD=-20V, VGS=-10V
Min Typ
Max Unit
-40
-
-1.0 -2.0
-
-
-
-
34
46
12
-
V
-3.0
-1
μA
±0.1
45
mΩ
60
-
S
-
15.6
-
-
2.4
-
nC
-
3.8
-
-
660
-
-
57
-
pF
-
100
-
-
14.7
-
-
7.2
-
ns
-
32.1
-
-
12.5
-
-
-
1.2
V
-
27.2
-
ns
-
19.6
-
nC
.
June 2009. Version 1.0
2
MagnaChip Semiconductor Ltd.