MDS3754A Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – P-Channel Trench MOSFET, -40V, -6.0A, 45m(ohm)

25
V_GS = -10V
-8V
-4.5V
20
-4.0V
15
10
5
-3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1.6
1. V_GS = 10 V
2. I_D = -6 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
20
※ Notes :
V_DS = -5V
16
12
8
T_A=125℃
25℃
-55℃
4
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
120
100
80
60
V_GS = -4.5V
40
V_GS = -10V
20
0
5
10
15
20
25
-I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
120
100
80
T_A = 125℃
60
40
T_A = 25℃
20
0
2
4
6
8
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
V = 0V
GS
10¹
T_A=125℃
25℃
10⁰
0.4
0.6
0.8
1.0
1.2
1.4
-V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
June 2009. Version 1.0
3
MagnaChip Semiconductor Ltd.