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| MDS3753E Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – P-Channel Trench MOSFET, -40V, -7.1A, 30m(ohm) | |||
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10
â» Note : ID = -4.7A
8
VDS = -32V
6
4
2
0
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
103
Operation in This Area
102
is Limited by R DS(on)
101
100
10-1
10-2
10-1
100 s
100 ïs
1 ms
10 ms
100 ms
1s
10 s
DC
Single Pulse
RthJA=125â /W
TA=25â
100
101
102
-VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
100
D=0.5
0.2
10-1 0.1
0.05
0.02
0.01
10-2
single pulse
â» Notes :
Duty Factor, D=t1/t2
PEAK
T
J
=
P
DM
*
Zθ
JA*
Rθ
JA(t)
+
T
A
R
Î
JA=125â
/W
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
2.0n
1.6n
Ciss
1.2n
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800.0p
400.0p
Coss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
0.0
0
10
20
30
-VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
10
8
6
4
2
0
25
50
75
100
125
150
T,
A
Case
Temperature
[â
]
Fig.10 Maximum Drain Current vs. Case
Temperature
Nov 2011 Version 1.1
4
MagnaChip Semiconductor Ltd.
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