MDS3753E Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – P-Channel Trench MOSFET, -40V, -7.1A, 30m(ohm)

MDS3753E
P-Channel Trench MOSFET, -40V, -7.1A, 30mΩ
General Description
The MDS3753E uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance, high
switching performance and excellent reliability
Low RDS(ON) and low gate charge operation offer superior
benefit in the application.
Features
 VDS = -40V
 ID = -7.1A @ VGS = 10V

RDS(ON)
<30m @ VGS = -10V
<37m @ VGS = -4.5V
Applications
 Inverters
 General purpose applications
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
D
G
S
Absolute Maximum Ratings (T_A =25^oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
Rating
-40
±20
-7.1
-50
2.5
98
-55~150
Rating
50
25
Unit
V
V
A
A
W
mJ
o_C
Unit
o_C/W
Nov 2011 Version 1.1
1
MagnaChip Semiconductor Ltd.