MDS3753E Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – P-Channel Trench MOSFET, -40V, -7.1A, 30m(ohm)

20
V = -10V
GS
-5.0V
15
-6.0V
-4.0V
-4.5V
-3.5V
10
-3.0V
5
0
0.0
0.5
1.0
1.5
2.0
-V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
1.8
※ Notes :
1. V_GS = -10 V
1.6
2. I_D = -3.3 A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
Area
20
※ Notes :
V_DS = -10V
16
12
T_A=25℃
8
4
0
0
1
2
3
4
5
-V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
60
50
40
30
V_GS = -4.5V
20
V_GS = -10V
10
5
10
15
20
Fig.2 On-Re^-s^IDi^,s^Dt^ra^ainⁿ c^Cue^rreVⁿa^{t [}r^Ai^]ation with
Drain Current and Gate Voltage
100
80
60
40
T_A = 125℃
20
T_A = 25℃
0
2
4
6
8
10
-V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
※ Notes :
10¹
V_GS = 0V
10⁰
T_A=125℃
25℃
10^-1
0.2
0.4
0.6
0.8
1.0
1.2
-V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Nov 2011 Version 1.1
3
MagnaChip Semiconductor Ltd.