MDS3753E Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – P-Channel Trench MOSFET, -40V, -7.1A, 30m(ohm)

Ordering Information
Part Number
MDS3753EURH
Temp. Range
-55~150^oC
Package
SO-8
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (T_J =25^oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
Test Condition
Min
Typ
Max Unit
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
ID = -250μA, VGS = 0V
VDS = VGS, ID = -250μA
VDS = -40V, VGS = 0V
VGS = ±16V, VDS = 0V
VGS = -10V, ID = -3.3A
VGS = -4.5V, ID = -3.3A
VDS = -10V, ID = -3.3A
-40
-
-
V
-1.0
-1.8
-3.0
-
-
-10
μA
-
-
±10
-
20
30
mΩ
-
27
37
14
-
S
-
32.7
-
VDD = -32V, ID = -4.7A,VGS = -10V
-
4.1
-
nC
-
7.4
-
-
1423
-
VDS = -15V, VGS = 0V, f = 1.0MHz
-
129
-
pF
-
221
-
-
14.7
-
VGS = -10V ,VDD = -20V, ID = -3.3A
-
7.1
-
RGEN = 4.7Ω
-
44.2
-
ns
-
9.0
-
IS = -4.7A, VGS = 0V
IS = -4.7A, di/dt=100A/us
-
0.81
1.2
V
-
34
-
ns
-
36.5
-
nC
Note :
1. Surface mounted FR4 board with 2oz. Copper.
2. Starting TJ=25°C, L=1mH, IAS=-14A VDD=-20V, VGS=-10V
Nov 2011 Version 1.1
2
MagnaChip Semiconductor Ltd.