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| MDS3652 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -11A, 17m(ohm) | |||
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10
* Note : ID = -11A
8
6
4
2
0
0
5
10
15
20
25
30
35
-Qg [nC]
Fig.7 Gate Charge Characteristics
102
1 ms
101
10 ms
Operation in This Area
100
is Limited by R DS(on)
100 ms
1s
10-1
10-2
10-1
Single Pulse
Rθ ja=40â /W
Ta=25â
100
101
-VDS [V]
10s
DC
102
Fig.9 Maximum Safe Operating Area
2500
2000
1500
Ciss = Cgs + Cgd (Cds = shorted)
C =C +C
oss
ds
gd
Crss = Cgd
C
iss
1000
500
C
oss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
5
10
15
20
25
30
-VDS [V]
Fig.8 Capacitance Characteristics
14
12
10
8
6
4
2
0
25
50
75
100
125
150
Ta [â ]
Fig.10 Maximum Drain Current vs.
Ambient Temperature
101
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
* Notes :
Duty Factor, D=t /t
12
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JA=40â /W
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [s]
Fig.11 Transient Thermal Response Curve
Jul 2011. Version 1.1
4
MagnaChip Semiconductor Ltd.
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