MDS3652 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -11A, 17m(ohm)

MDS3652
Single P-Channel Trench MOSFET, -30V, -11A, 17mΩ
General Description
The MDS3652 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance, high
switching performance and excellent reliability
Features
 VDS = -30V
 ID = -11A @VGS = -10V

RDS(ON)
< 17mΩ @VGS = -10V
< 27mΩ @VGS = -4.5V
Applications
 Load Switch
 General purpose applications
D
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
G
S
Absolute Maximum Ratings (T_a =25^oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current
Pulsed Drain Current
Power Dissipation⁽¹⁾
Single Pulse Avalanche Energy⁽²⁾
Junction and Storage Temperature Range
Ta=25^oC
Ta=100^oC
Ta=25^oC
Ta=100^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)⁽¹⁾
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
Rating
-30
±20
-11
-7
-60
3.1
1.2
60
-55~150
Rating
40
25
Unit
V
V
A
A
A
W
mJ
o_C
Unit
o_C/W
Jul 2011. Version 1.1
1
MagnaChip Semiconductor Ltd.