MDS3652 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -11A, 17m(ohm)

50
-10.0V _-6.0V
45
-5.0V
-4.5V
40
35
30
-4.0V
25
20
15
-3.5V
10
5
V_GS=-3.0V
0
0
1
2
3
4
5
-V_DS [V]
Fig.1 On-Region Characteristics
1.8
*Note; I =-11A
D
1.6
1.4
V_GS=-10V
V =-4.5V
GS
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T,
J
Junction
Temperature
[℃
]
Fig.3 On-Resistance Variation with
Temperature
50
40
V_GS=-4.5V
30
20
V_GS=-10V
10
0
0
5
10
15
20
-I [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
50
*Note ; I_D=-11A
45
40
35
125℃
30
25
25℃
20
15
10
4
5
6
7
8
9
10
-V_GS [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
* Note ; V_DS=-5V
15
10
5
125℃
25℃
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-V_GS [V]
Fig.5 Transfer Characteristics
Jul 2011. Version 1.1
3
10
1
0.1
0.01
1E-3
125℃
25℃
1E-4
0.0
0.2
0.4
0.6
0.8
1.0
-V_SD [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.