MDS3652 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -11A, 17m(ohm)

Ordering Information
Part Number
MDS3652URH
Temp. Range
-55~150^oC
Package
SOIC-8
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (T_a = 25^oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
gFS
Dynamic Characteristics
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Output Capacitance
Coss
Turn-On Delay Time
td(on)
Turn-On Rise Time
tr
Turn-Off Delay Time
td(off)
Turn-Off Fall Time
tf
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Qrr
Test Condition
ID = -250μA, VGS = 0V
VDS = VGS, ID = -250μA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = -10V, ID = -11A
VGS = -4.5V, ID = -6A
VDS = -5V, ID = -11A
VDS = -15V, ID = -11A,
VGS = -10V
VDS = -15V, VGS = 0V,
f = 1.0MHz
VGS = -10V ,VDS = -15V,
RL = 2.7Ω, RGEN = 3Ω
IS = 1A, VGS = 0V
IF = -11A, di/dt = 100A/μs
Min
Typ
Max
Unit
-30
-
-
V
-1.0
-1.9
-3.0
-
-1
μA
-
-
±0.1
-
13
17
mΩ
-
21
27
-
25
-
S
-
35
-
-
7.8
-
nC
-
6.2
-
-
1770
-
-
150
-
pF
-
350
-
-
13.0
-
-
26.8
-
ns
-
34.4
-
-
17.4
-
-
-0.75
-
V
-
27
-
ns
-
12
-
nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. Starting TJ = 25°C, L = 1mH, IAS = 11A, VDD = 15V, VGS = 10V
Jul 2011. Version 1.1
2
MagnaChip Semiconductor Ltd.