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| MDS3604 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -11A, 12.1m(ohm) | |||
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10
* Note :VDS = -15V
ID = -12A
8
6
4
2
0
0
10
20
30
40
-Qg [nC]
Fig.7 Gate Charge Characteristics
102
101
Operation in This Area
100
is Limited by R DS(on)
100 us
1 ms
10 ms
100 ms
1s
10s
100s
DC
10-1
Single Pulse
Rθ ja=50â/W
Ta=25â
10-2
10-1
100
101
102
-VDS [V]
Fig.9 Maximum Safe Operating Area
101
100
D=0.5
0.2
0.1
10-1
0.05
0.02
0.01
10-2
single pulse
* Notes :
Duty Factor, D=t /t
12
PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA
RÎ JA=50â/W
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [s]
Fig.11 Transient Thermal Response Curve
2.5n
2.0n
Ciss
1.5n
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1.0n
500.0p
Coss
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0.0
0
5
10
15
20
25
30
-V [V]
DS
Fig.8 Capacitance Characteristics
16
14
12
10
8
6
4
2
0
25
50
75
100
125
150
Ta [â]
Fig.10 Maximum Drain Current vs.
Ambient Temperature
May. 2011 Version 1.1
4
MagnaChip Semiconductor Ltd.
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