MDS3604 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -11A, 12.1m(ohm)

Ordering Information
Part Number
MDS3604URH
Temp. Range
-55~150^oC
Package
SOIC-8
Packing
Tape & Reel
Quantity
3000 units
RoHS Status
Halogen Free
Electrical Characteristics (T_a = 25^oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = -250µA, VGS = 0V
VDS = VGS, ID = -250µA
VDS = -30V, VGS = 0V
VGS = ±25V, VDS = 0V
VGS = -20V, ID = -12A
VGS = -10V, ID = -12A
VGS = -5V, ID = -10A
VDS = -5V, ID = -10A
VDS = -15V, ID = -12A
VGS = -10V
VDS = -15V, VGS = 0V,
f = 1.0MHz
VGS = -10V ,VDS = -15V,
RL = 1.25Ω, RGEN = 3Ω
IS = -1A, VGS = 0V
IF = -12A, di/dt = 100A/µs
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. Starting TJ=25°C, L=1mH, IAS= -13A VDD=-20V, VGS=-10V.
Min Typ
Max Unit
-30
-
-
V
-1.0 -1.8
-3.0
-
-1
µA
-
-
±0.1
-
8.6
10
mΩ
-
10
12.1
14.6 18.3
25.5
-
S
-
30.5
-
-
5.2
-
nC
-
7.0
-
-
1433
-
-
212
-
pF
-
338
-
-
15.2
-
-
12.9
-
ns
-
50.6
-
-
34.6
-
-
-0.73 -1.0
V
-
38.5
ns
-
35.9
-
nC
May. 2011 Version 1.1
2
MagnaChip Semiconductor Ltd.