MDS3604 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -11A, 12.1m(ohm)

MDS3604
Single P-Channel Trench MOSFET, -30V, -11A, 12.1mΩ
General Description
The MDS3604 uses advanced MagnaChip’s MOSFET
Technology to provide low on-state resistance.
This device is suited for Power Management and load
switching applications common in Notebook Computers
and Portable Battery Packs.
Features
VDS = -30V
ID = -11A @VGS = -10V
RDS(ON)
< 10.0mΩ @VGS = -20V
< 12.1mΩ @VGS = -10V
< 18.3mΩ @VGS = -5V
Applications
Load Switch
General purpose applications
Smart Module for Note PC Battery
D
5(D)
6(D)
7(D)
8(D)
4(G)
G
3(S)
2(S)
1(S)
Absolute Maximum Ratings (T_a =25^oC unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy
Junction and Storage Temperature Range
(Note 1)
(Note 2)
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1)
Symbol
RθJA
RθJC
S
Rating
-30
±25
-11
-44
2.5
84.5
-55~150
Rating
50
25
Unit
V
V
A
A
W
mJ
o_C
Unit
o_C/W
May. 2011 Version 1.1
1
MagnaChip Semiconductor Ltd.