MDS3604 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single P-Channel Trench MOSFET, -30V, -11A, 12.1m(ohm)

50
45
-10.0V
40
-5.0V
35
-6.0V
-8.0V
-4.0V
30
25
20
V_GS=-3.5V
15
10
V_GS=-3.0V
5
V_GS=-2.5V
0
0.0
0.5
1.0
1.5
2.0
2.5
-V_DS [V]
Fig.1 On-Region Characteristics
1.8
*Note; I_D=-12A
1.6
1.4
V_GS=-10V
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [℃]
Fig.3 On-Resistance Variation with
Temperature
25
20
V_GS=-5V
15
V_GS=-10V
10
5
0
0
10
20
30
40
-I_D [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
30
*Note ; I_D=-12A
25
20
15
10
5
2
3
4
5
6
7
8
9
10
-V_GS [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
30
* Note ; V_DS=-5V
25
20
15
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
-V_GS [V]
Fig.5 Transfer Characteristics
May. 2011 Version 1.1
3
※ Notes :
V_GS = 0V
10¹
10⁰
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
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