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| MDS1951 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 60V, 6A, 45m(ohm) | |||
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10
â» Note : ID = 4.5A
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
102
101
100
Operation in This Area
is Limited by R DS(on)
10-1
Single Pulse
Rθ ja=50â /W
Ta=25â
10-2
10-1
100
101
VDS [V]
1 ms
10 ms
100ms
1s
10s
DC
102
Fig.9 Maximum Safe Operating Area
700
600
500
Ciss
400
300
200
100
0
0
Coss
Crss
5
10
15
20
25
30
V [V]
DS
Fig.8 Capacitance Characteristics
7
6
5
4
3
2
1
0
25
50
75
100
125
150
T,
a
Ambient
Temperature
[â
]
Fig.10 Maximum Drain Current
vs. Ambient Temperature
101
100
D=0.5
0.2
10-1 0.1
0.05
0.02
10-2 0.01
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ Ja* Rθ J(at) + Ta
RÎ Ja=50â /W
single pulse
10-3
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
June 2010. Version 1.0
4
MagnaChip Semiconductor Ltd.
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