MDS1951 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 60V, 6A, 45m(ohm)

MDS1951
Single N-Channel Trench MOSFET 60V, 6A, 45mΩ
General Description
The MDS1951 uses advanced Magnachip’s
MOSFET Technology, which provides low on-state
resistance, high switching performance and
excellent reliability.
Features
 VDS = 60V
 ID = 6A @VGS = 10V

RDS(ON)
< 45mΩ @ VGS = 10V
< 55mΩ @ VGS = 4.5V
Applications
 Inverters
 General purpose applications
5(D)
6(D)
D
7(D)
8(D)
G
4(G)
3(S)
2(S)
1(S)
Absolute Maximum Ratings (T_a =25^oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current⁽²⁾
Characteristics
Pulsed Drain Current
Power Dissipation for Single Operation
Single Pulse Avalanche Energy⁽³⁾
Junction and Storage Temperature Range
TA=25^oC
TA=70^oC
TA=25^oC
TA=70^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristic
Characteristics
Thermal Resistance, Junction-to-Ambient (Steady-State)⁽¹⁾
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
June 2010. Version 1.0
1
S
Rating
Unit
60
V
±20
V
6.0
A
4.8
A
30
A
2.5
W
1.6
25
mJ
-55~150
o_C
Rating
50
25
Unit
o_C/W
MagnaChip Semiconductor Ltd.