MDS1951 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 60V, 6A, 45m(ohm)

Ordering Information
Part Number
MDS1951URH
Temp. Range
-55~150^oC
Package
SOIC-8
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (T_a =25^oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge ( Vgs=10V)
Total Gate Charge ( Vgs=4.5V)
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
Test Condition
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
gFS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 60V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 3.0A
VDS = 10V, ID =3.3A
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
VDS = 30V, ID = 4.5A, VGS = 10V
VDS = 30V, VGS = 0V, f = 1.0MHz
VGS = 10V ,VDS = 30V,
RL = 6.7Ω, RGEN = 5Ω
IS = 1.0A, VGS = 0V
IF = 4.5A, di/dt = 100A/μs
Note :
1. Surface mounted RF4 board with 2oz. Copper.
2. PD is based on TJ(MAX)=150°C
a. PD (TC=25°C) is based on RθJC,
b. PD (TA=25°C) is based on RθJA, t<10sec
3. Starting TJ=25°C, L=1mH, VGS=10V,ID=5A, VDD=30V, Rated VDS=60V
Min Typ Max Unit
60
-
-
V
1.0
1.9
3.0
-
-
1
μA
-
-
0.1
-
37
45
mΩ
-
44
55
-
11
-
S
-
9.0 10.5
4.4
nC
-
1.5
-
-
2.0
-
-
420
-
-
25
-
pF
-
50
-
-
4.5
-
-
20
-
ns
-
15
-
-
9.5
-
-
0.7
1.1
V
-
21
30
ns
-
25
-
nC
June 2010. Version 1.0
2
MagnaChip Semiconductor Ltd.