MDS1951 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 60V, 6A, 45m(ohm)

15
VGS=10.0V
VGS=5.0V
10
VGS=4.0V
5
VGS=3.0V
0
0
1
2
3
4
5
V_DS (Volts)
Fig.1 On-Region Characteristics
2.0
1.8
1.6
V_GS=10V
I_D=4.5A
1.4
V_GS=4.5V
1.2
I_D=3.0A
1.0
0.8
0.6
-75 -50 -25
0
25 50 75 100 125 150 175
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
120
110
100
90
80
70
60
50
40
30
20
10
0
V_GS=4.5V
V_GS=10V
5
10
15
20
25
30
I_D [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
160
120
80
T_A = 125℃
40
T_A = 25℃
0
2
4
6
8
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
15
10
125℃
25℃
5
0
0
1
2
3
4
5
V_GS (Volts)
Fig.5 Transfer Characteristics
10
125℃
1
25℃
0.1
0.4
0.5
0.6
0.7
0.8
0.9
1.0
-V_SD [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
June 2010. Version 1.0
3
MagnaChip Semiconductor Ltd.