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MDS1903 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 3.3A, 110m(ohm)
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10
※ Note : ID = 3.0A
VDS = 50V
8
6
4
2
0
0
2
4
6
8
10
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
800
600
Ciss
400
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
200
0
0
Coss
Crss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
102
4
101
1ms
100
Operation in This Area
is Limited by R DS(on)
10ms
100ms
10-1
10-2
10-1
Single Pulse
TJ=Max rated
TA=25℃
100
101
VDS, Drain-Source Voltage [V]
1s
10s
100s
DC
102
Fig.9 Maximum Safe Operating Area
102
D=0.5
0.2
101
0.1
0.05
0.02
100
0.01
10-1
single pulse
10-2
10-4
10-3
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
Jun 2011 Version 1.0
3
2
1
0
25
50
75
100
125
150
TA, Ambient Temperature [℃ ]
Fig.10 Maximum Drain Current vs.
Ambient Temperature
4
MagnaChip Semiconductor Ltd.
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