MDS1903 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 3.3A, 110m(ohm)

30
V = 10V
25
GS
8.0V
20
5.0V
4.5V
15
10
4.0V
5
3.5V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_DS, Drain-Source Voltage [V]
Fig.1 On-Region Characteristics
2.4
2.2
※ Notes :
1. V_GS = 10 V
2.0
2. I_D = 3.0 A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
150
140
130
120
110
100
90
80
70
0
V_GS = 6.0V
V_GS = 10V
5
10
15
20
25
I_D, Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
200
※ Notes :
I_D = 3.0A
175
150
125
100
T_J = 25℃
75
50
2
3
4
5
6
7
8
9
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
25
※ Notes :
V_DS = 10V
20
15
T_J=25℃
10
5
0
0
1
2
3
4
5
6
7
8
V_GS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
※ Notes :
V_GS = 0V
10¹
10⁰
T_J=25℃
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
V_SD, Source-Drain voltage [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Jun 2011 Version 1.0
3
MagnaChip Semiconductor Ltd.