MDS1903 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 3.3A, 110m(ohm)

MDS1903
Single N-channel Trench MOSFET 100V, 3.3A, 110mΩ
ㄹ
General Description
The MDS1903 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS1903 is suitable device for DC to DC
converter and general purpose applications.
Features
 VDS = 100V
 ID = 3.3A @VGS = 10V

RDS(ON) (MAX)
< 110mΩ @VGS = 10V
< 120mΩ @VGS = 6.0V
5(D)
6(D)
7(D)
8(D)
4(G)
3(S)
2(S)
1(S)
D
G
S
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy ⁽²⁾
Junction and Storage Temperature Range
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
TA=25^oC
TA=70^oC
TA=25^oC
TA=70^oC
Jun 2011 Version 1.0
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Rating
Unit
100
V
±20
V
3.3
A
2.6
12
A
2.5
W
1.6
21
mJ
-55~150
o_C
Symbol
RθJA
RθJC
Rating
50
25
Unit
o_C/W
MagnaChip Semiconductor Ltd.