MDS1903 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 100V, 3.3A, 110m(ohm)

Ordering Information
Part Number
MDS1903URH
Temp. Range
-55~150^oC
Package
SOIC-8
Packing
Tape & Reel
Rohs Status
Halogen Free
Electrical Characteristics (T_J =25^oC)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Symbol
BVDSS
VGS(th)
IDSS
IGSS
Drain-Source ON Resistance
RDS(ON)
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
gfs
Qg(10V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
Test Condition
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 3A
VGS = 6.0V, ID = 3A
VDS = 10V, ID = 3A
VDS = 50.0V, ID = 3A,
VGS = 10V
VDS = 25.0V, VGS = 0V,
f = 1.0MHz
VGS = 10V, VDS = 50V,
ID = 3A , RG = 3.0Ω
IS = 3A, VGS = 0V
IF = 3A, dl/dt = 100A/μs
Note :
1.
2.
Surface mounted FR-4 board by JEDEC (jesd51-7)
EAS is tested at starting Tj = 25℃ , L = 1.0mH, IAS = 6.5A, VDD = 50V, VGS = 10V
Min
Typ
Max Unit
100
-
-
V
1.0
2.0
3.0
-
-
1
μA
-
-
±0.1
-
90
110
mΩ
-
100
120
-
10
-
S
-
8.8
-
-
1.3
-
nC
-
2.1
-
-
475
800
-
20
-
pF
-
60
-
-
6.2
-
-
7.1
-
ns
-
17.3
-
-
6.1
-
-
0.75
1.2
V
-
32.0
-
ns
-
48.5
-
nC
Jun 2011 Version 1.0
2
MagnaChip Semiconductor Ltd.