 English |
|
|
|
|
|
|
|
| MDS1656 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 30V, 7.2A, 28m(ohm) | |||
| |||
| ◁ |
10
â» Note : ID = 20A
8
6
4
2
0
0
2
4
6
8
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
102
Operation in This Area
is Limited by R DS(on)
101
100
100 µs
1 ms
10 ms
100 ms
1s
DC
10-1
Single Pulse
TJ=Max rated
TC=25â
10-1
100
101
102
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
500
450
400
350
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
300
250
200
150
Coss
100
50
Crss
â» Notes ;
1. VGS = 0 V
2. f = 1 MHz
0
0
5
10
15
20
25
30
VDS, Drain-Source Voltage [V]
Fig.8 Capacitance Characteristics
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC, Case Temperature [â]
Fig.10 Maximum Drain Current vs. Case
Temperature
102 D=0.5
0.2
0.1
101
0.05
0.02
single pulse
100
0.01
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RÎ JA=100â/W
10-1
10-6
10-5
Fig.11
Curve
10-4
10-3
10-2
10-1
100
101
102
103
104
t1, Rectangular Pulse Duration [sec]
Transient Thermal Response
August 2008. Version 1.0
4
MagnaChip Semiconductor Ltd.
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese