MDS1656 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 30V, 7.2A, 28m(ohm)

30
10V ^6.0V
5.0V
25
4.5V
20
4.0V
15
10
3.5V
5
VGS=3V
0
0
1
2
3
4
5
V_DS (Volts)
Fig.1 On-Region Characteristics
1.8
※ Notes :
1.6
1. V_GS = 10 V
2. I_D = 20 A
1.4
1.2
V_GS=10V
V_GS=4.5V
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T_J, Junction Temperature [^oC]
Fig.3 On-Resistance Variation with
Temperature
60
50
40
30
20
10
0
5
10
15
20
-I_D [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
70
60
50
T_A = 125℃
40
30
T_A = 25℃
20
10
2
4
6
8
10
V_GS, Gate to Source Volatge [V]
Fig.4 On-Resistance Variation with
Gate to Source Voltage
20
15
10
125℃
5
25℃
0
0
1
2
3
4
5
V_GS (Volts)
Fig.5 Transfer Characteristics
August 2008. Version 1.0
3
10
25℃
125℃
1
0.1
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V_SD [V]
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
MagnaChip Semiconductor Ltd.