MDS1656 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 30V, 7.2A, 28m(ohm)

MDS1656
Single N-Channel Trench MOSFET 30V, 7.2A, 28mΩ
General Description
The MDS1656 uses advanced MagnaChip’s trench MOSFET
Technology to provide high performance in on-state resistance,
switching performance and reliability
Low RDS(ON), low gate charge can be offering superior benefit in
the application.
Features
VDS = 30V
ID = 7.2A @VGS = 10V
RDS(ON)
< 28mΩ @VGS = 10V
< 42mΩ @VGS = 4.5V
Applications
Inverters
General purpose applications
D
5(D)
6(D)
7(D)
8(D)
G
4(G)
3(S)
2(S)
1(S)
Absolute Maximum Ratings (T_a =25^oC unless otherwise noted)
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current⁽¹⁾
Characteristics
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy⁽²⁾
Junction and Storage Temperature Range
TC=25^oC
TC=70^oC
TC=25^oC
TC=70^oC
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient(Steady-State)⁽¹⁾
Thermal Resistance, Junction-to-Case
Symbol
RθJA
RθJC
S
Rating
30
±20
7.2
6.2
30
2
1.44
20
-55~150
Rating
100
60
Unit
V
V
A
A
A
W
mJ
o_C
Unit
o_C/W
August 2008. Version 1.0
1
MagnaChip Semiconductor Ltd.