MDS1656 Datasheet, PDF (2/6 Pages) MagnaChip Semiconductor. – Single N-Channel Trench MOSFET 30V, 7.2A, 28m(ohm)

Ordering Information
Part Number
MDS1656R
Temp. Range
-55~150^oC
Package
SO-8
Packing
Tape & Reel
RoHS Status
Halogen Free
Electrical Characteristics (T_a =25^oC unless otherwise noted)
Characteristics
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
On-State Drain Current
Forward Transconductance
Maximum Body-Diode Continuous Current
Dynamic Characteristics
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Symbol
BVDSS
VGS(th)
IDSS
IGSS
RDS(ON)
ID(ON)
gFS
Test Condition
ID = 250µA, VGS = 0V
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 6.9A
VGS = 4.5V, ID = 5.0A
VDS = 5V, VGS = 4.5V
VDS = 5V, ID = 6.9A
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
td(off)
tf
VSD
trr
Qrr
VDS = 15V, ID = 6.9A,
VGS = 10V
VDS = 15V, VGS = 0V,
f = 1.0MHz
VGS = 10V ,VDS = 15V,
RL = 2.2Ω, RGEN = 3Ω
IS = 1A, VGS = 0V
IF = 6.9A, di/dt = 100A/µs
Notes :
1. Surface mounted RF4 board with 2oz. Copper..
2. Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V.
Min Typ
Max Unit
30
-
-
V
1.0
1.9
3.0
-
1
µA
-
-
0.1
-
21.5
28
mΩ
-
31.5
42
20
-
-
A
10
15.4
-
S
-
-
-
6.94
-
-
1.54
-
nC
-
1.4
-
-
334
-
-
48
-
pF
-
83
-
-
3.5
-
-
25.4
-
ns
-
14.2
-
-
10.5
-
-
0.75
1.0
V
-
16.5
20
ns
-
7.8
10
nC
August 2008. Version 1.0
2
MagnaChip Semiconductor Ltd.