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| MDS1101 Datasheet, PDF (4/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 12V, 15A, 8m(ohm) | |||
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6
* Note : I = 12A
D
V = 10V
DS
4
2
0
0
5
10
15
20
Q , Total Gate Charge [nC]
G
Fig.7 Gate Charge Characteristics
103
102
101
1 ms
Operation in This Area
is Limited by R
DS(on)
100
Single Pulse
T =Max Rated
J
T =25oC
A
10-1
10-1
100
10 ms
100 ms
1s
DC
101
V , Drain-Source Voltage [V]
DS
Fig.9 Maximum Safe Operating Area
5000
4000
C = C + C (C = shorted)
iss
gs
gd ds
C
C =C +C
oss
ds
gd
iss
C =C
rss
gd
3000
2000
* Notes ;
1. V = 0 V
GS
C
2. f = 1 MHz
oss
1000
0
0
C
rss
3
6
9
12
V , Drain-Source Voltage [V]
DS
Fig.8 Capacitance Characteristics
101
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
single pulse
10-3
10-4
10-3
â» Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
Fig.10 Transient Thermal Response
Curve
Apr. 2016. Ver. 1.0
4
MagnaChip Semiconductor Ltd.
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