MDS1101 Datasheet, PDF (1/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 12V, 15A, 8m(ohm)

MDS1101
Single N-channel Trench MOSFET 12V, 15A, 8mΩ
General Description
The MDS1101 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS1101 is suitable device for DC/DC Converter
and general purpose applications.
Features
 VDS = 12V
 ID = 15A @VGS = 4.5V

RDS(ON)
< 8.0 mΩ @VGS = 4.5V
 100% UIL Tested
 100% Rg Tested
D
5(D)
6(D)
7(D)
8(D)
G
4(G)
3(S)
2(S)
1(S)
S
8 Leads, SOIC
Absolute Maximum Ratings (Ta = 25^oC)
Drain-Source Voltage
Gate-Source Voltage
Characteristics
Continuous Drain Current ⁽¹⁾
Pulsed Drain Current
Power Dissipation
Single Pulse Avalanche Energy⁽²⁾
Junction and Storage Temperature Range
TA=25^oC
TA=70^oC
TA=25^oC
TA=70^oC
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient ⁽¹⁾
Thermal Resistance, Junction-to-Case
Apr. 2016. Ver. 1.0
1
Symbol
VDSS
VGSS
ID
IDM
PD
EAS
TJ, Tstg
Symbol
RθJA
RθJC
Rating
Unit
12
V
±12
V
15
12
A
78
2.5
W
1.6
31
mJ
-55~150
o_C
Rating
50
25
Unit
o_C/W
MagnaChip Semiconductor Ltd.