MDS1101 Datasheet, PDF (3/6 Pages) MagnaChip Semiconductor. – Single N-channel Trench MOSFET 12V, 15A, 8m(ohm)

50
V = 10V
GS
4.5V
2.8V
40
3.0V
30
20
2.5V
10
0
0.0
0.5
1.0
1.5
2.0
V , Drain-Source Voltage [V]
DS
Fig.1 On-Region Characteristics
1.8
* Notes :
1. V = 10 V
GS
2. I = 11 A
1.6
D
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
T , Junction Temperature [oC]
J
Fig.3 On-Resistance Variation with
Temperature
50
* Notes :
V = 6V
DS
40
30
20
10
0
0
1
2
3
4
5
V , Gate-Source Voltage [V]
GS
Fig.5 Transfer Characteristics
20
15
10
V = 2.8V
GS
5
V = 4.5V
GS
0
0
20
40
I , Drain Current [A]
D
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
20
* Notes :
I = 12.0A
D
15
10
5
0
2
3
4
5
6
7
8
9
10
V , Gate to Source Volatge [V]
GS
Fig.4 On-Resistance Variation with
Gate to Source Voltage
* Notes :
V = 0V
GS
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V , Source-Drain voltage [V]
SD
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
Apr. 2016. Ver. 1.0
3
MagnaChip Semiconductor Ltd.